b sot223 pnp silicon planar medium power high gain transistor issue 3 - october 1995 features * low equivalent on-resistance; r ce(sat) 93m w at 3a * gain of 300 at i c =2 amps and very low saturation voltage applications * battery powered circuits complementay type ? fzt688b partmarking detail ? FZT788B absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -15 v emitter-base voltage v ebo -5 v peak pulse current i cm -8 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -15 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -15 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-10v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.15 -0.25 -0.45 -0.5 v v v i c =-0.5a, i b =-2.5ma* i c =-1a, i b =-5ma* i c =-2a, i b =-10ma* i c =-3a, i b =-50ma* base-emitter saturation voltage v be(sat) -0.9 v i c =-1a, i b =-5ma* base-emitter turn-on voltage v be(on) -0.75 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 500 400 300 150 1500 i c =-10ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on t off 35 400 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT788B c c e 3 - 244 -55c +25c +100c +100c +25c -55c 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (volts) v ce(sat) v i c i c - collector current (amps) v - (volts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - n orm alised gain v - (volts) 1200 900 600 h - t ypic al gain t amb =25c -55c +25c +100c +175c 0 0 v ce =2v 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v - (volts) -55c +25c +100c +175c i c /i b =200 i c /i b =10 i c /i b =200 i c /i b =100 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =200 v ce =2v 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 300 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10 FZT788B 3 - 245
b sot223 pnp silicon planar medium power high gain transistor issue 3 - october 1995 features * low equivalent on-resistance; r ce(sat) 93m w at 3a * gain of 300 at i c =2 amps and very low saturation voltage applications * battery powered circuits complementay type ? fzt688b partmarking detail ? FZT788B absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -15 v emitter-base voltage v ebo -5 v peak pulse current i cm -8 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -15 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -15 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-10v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.15 -0.25 -0.45 -0.5 v v v i c =-0.5a, i b =-2.5ma* i c =-1a, i b =-5ma* i c =-2a, i b =-10ma* i c =-3a, i b =-50ma* base-emitter saturation voltage v be(sat) -0.9 v i c =-1a, i b =-5ma* base-emitter turn-on voltage v be(on) -0.75 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 500 400 300 150 1500 i c =-10ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on t off 35 400 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT788B c c e 3 - 244 -55c +25c +100c +100c +25c -55c 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (volts) v ce(sat) v i c i c - collector current (amps) v - (volts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - n orm alised gain v - (volts) 1200 900 600 h - t ypic al gain t amb =25c -55c +25c +100c +175c 0 0 v ce =2v 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v - (volts) -55c +25c +100c +175c i c /i b =200 i c /i b =10 i c /i b =200 i c /i b =100 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =200 v ce =2v 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 300 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10 FZT788B 3 - 245
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